Changchun New Industries Optoelectronics Technology Co., Ltd.
Laser Diode

　

Laser Diode
　
Laser diode provided by CNI at 635 nm, 655 nm, 808 nm, 980 nm in c-mount package provide state-of-the-art power and brightness. The small emitting aperture, combined with low beam divergence, make these devices the highest-brightness family of CW diode lasers available in the industry.
◆Visible laser diode at 635nm
Features: Applications:
Display
High Brightness PDT
Biochemistry
High Power Military
Long lifetime Solid-state Laser Pumping
Narrow spectral Linewidth Materials Processing
High Polarization Purity Medical Therapeutics

Specifications
Part number units DL-635-0.15 DL-635-0.3
Peak Wavelength nm 635±10 635±10
CW Output Power W 0.15 0.30
Emitting Area µm 100 100
Spectral Width (FWHM) nm ≤2 ≤2
Slope Efficiency W/A ≥1.0 ≥1.0
Polarization 　 TM TM
Vertical Beam Divergence deg 42 42
HorizontalBeam Divergence deg 10 10
Wavelength Temperature Coefficient nm/℃ 0.3 0.3
Threshold Current A 0.35 0.5
Operating Current A 0.6 0.8
Operating Voltage V 2.0 2.2
Series Resistance Ω 0.35 0.35
Operating Temperature ℃ -20-30 -20-30
Storage Temperature ℃ -20-80 -20-80
◆Visible diode laser at 655nm

Specifications
Part number units DL-655-0.5 DL-655-1
Peak Wavelength nm 655±10 655±10
CW Output Power W 0.50 1
Emitting Area µm 150 150
Spectral Width (FWHM) nm ≤3 ≤3
Slope Efficiency W/A ≥1.0 ≥1.0
Polarization 　 TE TE
Vertical Beam Divergence deg 42 42
HorizontalBeam Divergence deg 10 10
Wavelength Temperature Coefficient nm/℃ 0.2 0.2
Threshold Current A 0.5 0.52
Operating Current A 0.9 1.3
Operating Voltage V 2.2 2.2
Series Resistance Ω 0.2 0.2
Operating Temperature ℃ -20-30 -20-30
Storage Temperature ℃ -20-80 -20-80
◆Near-infrared laser diode at 808nm
Features: Applications:
High Reliability Solid-state Laser Pumping
High brightness Materials Processing
Narrow spectral Linewidth Medical Therapeutics
High Polarization Purity Graphic arts

Specifications
Part Number 　 DL-808-0.5 DL-808-1.5 DL-808-2.5
Peak Wavelength nm 808±10 808±3 808±3
CW Output Power W 0.5 1.5 2.5
Emitting Area µm 50 100 150
Spectral Width (FWHM) nm ≤2.5 ≤3 ≤3
Slope Efficiency W/A ≥1.0 ≥1.1 ≥1.1
Polarization 　 TE TM TM
Vertical Beam Divergence deg 40 36 36
Horizontal Beam Divergence deg 10 10 10

Wavelength Temperature Coefficient

 nm/℃ 0.3 0.28 0.28
Threshold Current A 0.13 0.3 0.45
Operating Current A 0.6 1.3 2.5
Operating Voltage V 2.0 1.85 1.85
Series Resistance Ω 0.60 0.15 0.12
Operating Temperature ℃ 10～40 -20-30 -20-30
Storage Temperature ℃ -10～60 -20-80 -20-80
◆Near-infrared laser diode at 980nm

Specifications
Part Number 　 DL-980-1 DL-980-2
Peak Wavelength nm 980±3 980±3
CW Output Power W 1.0 2.0
Emitting Area µm 50 100
Spectral Width (FWHM) nm ≤4 ≤4
Slope Efficiency W/A ≥0.9 ≥0.9
Polarization 　 TE TE
Vertical Beam Divergence deg 38 38
Horizontal Beam Divergence deg 10 10

Wavelength Temperature Coefficient

 nm/℃ 0.3 0.3
Threshold Current A 0.15 0.25
Operating Current A 2.3 3.3
Operating Voltage V 1.6 1.6
Series Resistance Ω 0.07 0.07
Operating Temperature ℃ -20-30 -20-30
Storage Temperature ℃ -20-80 -20-80
　
　
Addr:No.668 Chuangxin Road High-tech Zone,Changchun 130012,P.R.China
Tel:+86-431-85603799     Fax:+86-431-87020258     E-mail: cnitra@public.cc.jl.cn